IPA95R450P7XKSA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; TO-220 FULLPAK PACKAGE; 450 MOHM; PRICE/PERFORMANCE

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IPA95R450P7XKSA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; TO-220 FULLPAK PACKAGE; 450 MOHM; PRICE/PERFORMANCE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPA95R450P7XKSA1

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1053 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPA95R450 Series

Part	Technology	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs
Infineon Technologies IPA95R450P7XKSA1	MOSFET (Metal Oxide)	20 V	N-Channel	-55 °C	150 °C	35 nC	950 V	Through Hole	10 V	14 A	3.5 V	PG-TO220-FP	1053 pF	TO-220-3 Full Pack	450 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 2.76
		10	$ 1.49
		50	$ 1.48
		100	$ 1.39
		500	$ 1.18
Digikey	Tube	1	$ 3.55
		10	$ 2.33
		100	$ 1.63
		500	$ 1.33
		1000	$ 1.23
		2000	$ 1.19

Description

General part information

IPA95R450 Series

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest950 V CoolMOS™ P7technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th)of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.

Documents

Technical documentation and resources