APT50GP60LDLG

Obsolete

Microsemi Corporation

IGBT 600V 150A 625W TO264

Search across all available documentation for this part.

Obsolete

Microsemi Corporation

IGBT 600V 150A 625W TO264

Technical Specifications

Parameters and characteristics for this part

Specification	APT50GP60LDLG

Current - Collector (Ic) (Max) [Max]	150 A
Current - Collector Pulsed (Icm)	190 A
Gate Charge	165 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	625 W
Supplier Device Package	TO-264
Switching Energy	456 µJ, 635 µJ
Td (on/off) @ 25°C	85 ns, 19 ns
Test Condition	4.3 Ohm, 400 V, 50 A, 15 V
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Test Condition	Package / Case	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Gate Charge	IGBT Type	Current - Collector (Ic) (Max) [Max]	Current - Collector Pulsed (Icm)	Power - Max [Max]	Supplier Device Package
Microsemi Corporation APT50GP60LDLG	4.3 Ohm 15 V 50 A 400 V	TO-264-3 TO-264AA	19 ns 85 ns	-55 °C	150 °C	456 µJ 635 µJ	Through Hole	600 V	2.7 V	165 nC	PT	150 A	190 A	625 W	TO-264

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT PT 600 V 150 A 625 W Through Hole TO-264

Technical documentation and resources

No documents available