BD179

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STMicroelectronics

TRANS NPN 80V 3A SOT32

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STMicroelectronics

TRANS NPN 80V 3A SOT32

Technical Specifications

Parameters and characteristics for this part

Specification	BD179

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	15 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	30 W
Supplier Device Package	SOT-32
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

TRANS NPN 80V 3A SOT32

Part	Operating Temperature	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max [Max]	Transistor Type	Package / Case	Current - Collector (Ic) (Max) [Max]
STMicroelectronics BD179	150 °C	Through Hole	80 V	SOT-32	100 µA	800 mV	15 hFE	30 W	NPN	TO-126-3, TO-225AA	3 A

General part information

Bipolar (BJT) Transistor NPN 80 V 3 A 30 W Through Hole SOT-32

Technical documentation and resources