DSEI19-06AS-TRL

Active

IXYS

DIODE GEN PURP 600V 20A TO263AA

Search across all available documentation for this part.

Active

IXYS

DIODE GEN PURP 600V 20A TO263AA

Technical Specifications

Parameters and characteristics for this part

Specification	DSEI19-06AS-TRL

Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Speed	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Mounting Type	Supplier Device Package	Current - Reverse Leakage @ Vr
IXYS DSEI19-06AS-TUB	600 V	1.7 V	Standard	200 mA 500 ns	50 ns	150 °C	-40 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	TO-263AA	50 µA
IXYS DSEI19-06AS-TRL	600 V	1.7 V	Standard	200 mA 500 ns	50 ns	150 °C	-40 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	TO-263AA	50 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 20A Surface Mount TO-263AA

Technical documentation and resources