
1N5401-G
ActiveComchip Technology
DIODE GEN PURP 100V 3A DO27
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1N5401-G
ActiveComchip Technology
DIODE GEN PURP 100V 3A DO27
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
Specification | 1N5401-G |
---|---|
Current - Average Rectified (Io) | 3 A |
Current - Reverse Leakage @ Vr | 5 µA |
Mounting Type | Through Hole |
Operating Temperature - Junction [Max] | 125 °C |
Operating Temperature - Junction [Min] | -65 C |
Package / Case | DO-201AD, Axial |
Speed | Standard Recovery >500ns |
Speed | 200 mA |
Supplier Device Package | DO-27 (DO-201AD) |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
Voltage - Forward (Vf) (Max) @ If [Max] | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Distributor | Package | Quantity | $ | |
---|---|---|---|---|
Digikey | Cut Tape (CT) | 1 | $ 0.41 | |
10 | $ 0.32 | |||
100 | $ 0.19 | |||
500 | $ 0.18 | |||
Tape & Reel (TR) | 1200 | $ 0.12 | ||
2400 | $ 0.11 | |||
6000 | $ 0.11 | |||
12000 | $ 0.10 | |||
30000 | $ 0.09 | |||
60000 | $ 0.09 |
1N5401 Series
DIODE GEN PURP 100V 3A DO27
Part | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Mounting Type | Voltage - Forward (Vf) (Max) @ If [Max] | Speed | Speed |
---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology 1N5401-G | 5 µA | 3 A | DO-27 (DO-201AD) | 100 V | Standard | 125 °C | -65 C | DO-201AD, Axial | Through Hole | 950 mV | Standard Recovery >500ns | 200 mA |
Description
General part information
1N5401 Series
Diode 100 V 3A Through Hole DO-27 (DO-201AD)
Documents
Technical documentation and resources
No documents available