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1N5401-G - DO-201AD

1N5401-G

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Comchip Technology

DIODE GEN PURP 100V 3A DO27

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1N5401-G - DO-201AD

1N5401-G

Active
Comchip Technology

DIODE GEN PURP 100V 3A DO27

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N5401-G
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]125 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-201AD, Axial
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDO-27 (DO-201AD)
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If [Max]950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.41
10$ 0.32
100$ 0.19
500$ 0.18
Tape & Reel (TR) 1200$ 0.12
2400$ 0.11
6000$ 0.11
12000$ 0.10
30000$ 0.09
60000$ 0.09

1N5401 Series

DIODE GEN PURP 100V 3A DO27

PartCurrent - Reverse Leakage @ VrCurrent - Average Rectified (Io)Supplier Device PackageVoltage - DC Reverse (Vr) (Max) [Max]TechnologyOperating Temperature - Junction [Max]Operating Temperature - Junction [Min]Package / CaseMounting TypeVoltage - Forward (Vf) (Max) @ If [Max]SpeedSpeed
Comchip Technology
1N5401-G
5 µA
3 A
DO-27 (DO-201AD)
100 V
Standard
125 °C
-65 C
DO-201AD, Axial
Through Hole
950 mV
Standard Recovery >500ns
200 mA

Description

General part information

1N5401 Series

Diode 100 V 3A Through Hole DO-27 (DO-201AD)

Documents

Technical documentation and resources

No documents available