AOTF66616L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 38A/72.5A TO220F

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 38A/72.5A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	AOTF66616L

Current - Continuous Drain (Id) @ 25°C	38 A, 72.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	2870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	8.3 W, 30 W
Rds On (Max) @ Id, Vgs	3.3 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.4 V

Part	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type
Alpha & Omega Semiconductor Inc. AOTF66616L	60 V	N-Channel	2870 pF	MOSFET (Metal Oxide)	6 V 10 V	38 A 72.5 A	20 V	60 nC	TO-220F	3.3 mOhm	8.3 W 30 W	3.4 V	-55 °C	150 °C	TO-220-3 Full Pack	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 38A (Ta), 72.5A (Tc) 8.3W (Ta), 30W (Tc) Through Hole TO-220F

Technical documentation and resources