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STW32NM50N - TO-247-3

STW32NM50N

Active
STMicroelectronics

N-CHANNEL 500 V, 0.1 OHM TYP., 22 A MDMESH(TM) II POWER MOSFET IN TO-247 PACKAGE

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DocumentsDatasheet+18
STW32NM50N - TO-247-3

STW32NM50N

Active
STMicroelectronics

N-CHANNEL 500 V, 0.1 OHM TYP., 22 A MDMESH(TM) II POWER MOSFET IN TO-247 PACKAGE

Deep-Dive with AI

DocumentsDatasheet+18

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW32NM50N
Current - Continuous Drain (Id) @ 25°C22 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs62.5 nC
Input Capacitance (Ciss) (Max) @ Vds1973 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]190 W
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 7.50
30$ 3.95
120$ 3.48
510$ 3.25
NewarkEach 1$ 8.67
10$ 7.08
25$ 5.48
60$ 5.13
120$ 4.77
270$ 4.30

Description

General part information

STW32NM50N Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.