2SA1312GRTE85LF

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A SMINI

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A SMINI

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1312GRTE85LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	150 mW
Supplier Device Package	S-Mini
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Supplier Device Package	Package / Case	Transistor Type	Vce Saturation (Max) @ Ib, Ic
Toshiba Semiconductor and Storage 2SA1312GRTE85LF	120 V	150 mW	Surface Mount	100 mA	200 hFE	125 ¯C	100 nA	100 MHz	S-Mini	SC-59 SOT-23-3 TO-236-3	PNP	300 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 120 V 100 mA 100MHz 150 mW Surface Mount S-Mini

Technical documentation and resources