DDB6U85N16LHOSA1

LTB

Infineon Technologies

DIODE MODULE, 1.6 KV, 100 A, 1.44 V, BRIDGE, MODULE, 6 PINS

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LTB

Infineon Technologies

DIODE MODULE, 1.6 KV, 100 A, 1.44 V, BRIDGE, MODULE, 6 PINS

Technical Specifications

Parameters and characteristics for this part

Specification	DDB6U85N16LHOSA1

Current - Average Rectified (Io) (per Diode)	60 A
Current - Reverse Leakage @ Vr	5 mA
Diode Configuration	3 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction	150 °C
Package / Case	Module
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	AG-ISOPACK-1
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.44 V

Part	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Technology	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Speed	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction	Package / Case
Infineon Technologies DDB6U85N16LHOSA1	1.44 V	AG-ISOPACK-1	Standard	60 A	3 Independent	Standard Recovery >500ns	200 mA	5 mA	Chassis Mount	150 °C	Module

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 3 Independent 1600 V 60A Chassis Mount Module

Technical documentation and resources