DMTH10H032LDVW-7

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Diodes Inc

100V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH10H032LDVW-7

Active

Diodes Inc

100V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DocumentsDatasheet Recommended Soldering Techniques

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Technical Specifications

Parameters and characteristics for this part

Specification	DMTH10H032LDVW-7

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	7.2 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	11.9 nC
Input Capacitance (Ciss) (Max) @ Vds	683 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	PowerDI3333-8 (SWP) (Type UXD)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

DMTH10H032LDVW Series

100V 175°C Dual N-Channel Enhancement Mode MOSFET

Part	Power - Max [Max]	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Configuration	Input Capacitance (Ciss) (Max) @ Vds
Diodes Inc DMTH10H032LDVW-7	1.5 W	MOSFET (Metal Oxide)	8-PowerVDFN	11.9 nC	-55 °C	175 ░C	2.5 V	Surface Mount	PowerDI3333-8 (SWP) (Type UXD)	7.2 A	100 V	32 mOhm	2 N-Channel	683 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2000	$ 0.33
		6000	$ 0.31
		10000	$ 0.30

Description

General part information

DMTH10H032LDVW Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.