IPB65R150CFDATMA1
ObsoleteCOOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ;
Deep-Dive with AI
Search across all available documentation for this part.
IPB65R150CFDATMA1
ObsoleteCOOLMOS™ CFD2 N-CHANNEL SUPERJUNCTION MOSFET 650 V ;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB65R150CFDATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22.4 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 86 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2340 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 195.3 W |
| Rds On (Max) @ Id, Vgs | 150 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPB65R150 Series
Replacement for650V CoolMOS™ CFD2is600V CoolMOS™ CFD7 650V CoolMOS™ CFD2is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
Documents
Technical documentation and resources