IAUZ20N08S5L300ATMA1

Active

Infineon Technologies

IAUZ20N08S5L300 IS AN AUTOMOTIVE MOSFET WITH 30MR 80V IN 3.3X3.3MM² S3O8 PACKAGE, USING INFINEON’S OPTIMOS™-5 TECHNOLOGY.

Search across all available documentation for this part.

Active

Infineon Technologies

IAUZ20N08S5L300 IS AN AUTOMOTIVE MOSFET WITH 30MR 80V IN 3.3X3.3MM² S3O8 PACKAGE, USING INFINEON’S OPTIMOS™-5 TECHNOLOGY.

Technical Specifications

Parameters and characteristics for this part

Specification	IAUZ20N08S5L300ATMA1

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	599 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	PG-TSDSON-8-32
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Grade	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Mounting Type	Supplier Device Package	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Qualification	FET Type
Infineon Technologies IAUZ20N08S5L300ATMA1	Automotive	4.5 V 10 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	20 A	10.5 nC	20 V	Surface Mount	PG-TSDSON-8-32	8-PowerTDFN	599 pF	30 mOhm	2 V	80 V	AEC-Q101	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 20A (Tc) 30W (Tc) Surface Mount PG-TSDSON-8-32

Technical documentation and resources