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IKA15N60TXKSA1 - INFINEON IKA15N60TXKSA1

IKA15N60TXKSA1

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Infineon Technologies

600 V, 15 A HARD SWITCHING IGBT3 DISCRETE WITH A SWITCHING FREQUENCY UP TO 20 KHZ. IT COMES WITH A SOFT, FAST RECOVERY ANTI PARALLEL EMITTER CONTROLLED DIODE IN A TO-220 FULL-PAK PACKAGE. IT IMPRESSES WITH LOW EMI EMISSIONS AND EASY PARALLEL SWITCHING DUE TO A POSITIVE TEMPERATURE COEFFICIENT - PERFECT FOR YOUR AIR CONDITIONING AND SOLAR SYSTEMS.

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IKA15N60TXKSA1 - INFINEON IKA15N60TXKSA1

IKA15N60TXKSA1

Active
Infineon Technologies

600 V, 15 A HARD SWITCHING IGBT3 DISCRETE WITH A SWITCHING FREQUENCY UP TO 20 KHZ. IT COMES WITH A SOFT, FAST RECOVERY ANTI PARALLEL EMITTER CONTROLLED DIODE IN A TO-220 FULL-PAK PACKAGE. IT IMPRESSES WITH LOW EMI EMISSIONS AND EASY PARALLEL SWITCHING DUE TO A POSITIVE TEMPERATURE COEFFICIENT - PERFECT FOR YOUR AIR CONDITIONING AND SOLAR SYSTEMS.

Technical Specifications

Parameters and characteristics for this part

SpecificationIKA15N60TXKSA1
Current - Collector (Ic) (Max) [Max]14.7 A
Current - Collector Pulsed (Icm)45 A
Gate Charge87 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseTO-220-3 Full Pack
Power - Max [Max]35.7 W
Reverse Recovery Time (trr)34 ns
Switching Energy570 µJ
Td (on/off) @ 25°C17 ns, 188 ns
Test Condition15 Ohm, 400 V, 15 V, 15 A
Vce(on) (Max) @ Vge, Ic2.05 V
Voltage - Collector Emitter Breakdown (Max) [Max]600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 500$ 1.04
NewarkEach 1$ 2.47
10$ 1.97
100$ 1.77
500$ 1.59
1000$ 1.35
2500$ 1.33
5000$ 1.31

Description

General part information

IKA15N60 Series

Hard-switching 600 V, 15 ATRENCHSTOP™ IGBT3Discrete copacked with full-rated external free-wheeling diode in a TO-220 Full-Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to the combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.