2N2905AE3
ActiveSMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES
2N2905AE3
ActiveSMALL-SIGNAL BJT TO-39 ROHS COMPLIANT: YES
Description
General part information
2N2905AE3-Transistor-RoHS Series
This specification covers the performance requirements for PNP, silicon, switching 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A and 2N2905AL transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/290. Provision for radiation hardness assurance (RHA) to eight radiation test levels is provided for JANTXV and JANS product assurance levels for type 2N2905A. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices which have passed RHA requirements.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N2905AE3 |
|---|---|
| Current - Collector (Ic) (Max) | 0.6 mA |
| Current - Collector Cutoff (Max) | 1 µA |
| DC Current Gain (hFE) (Min) | 100 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Package Name | TO-39 (TO-205AD) |
| Power - Max | 800 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) | 1.6 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
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