IPD33CN10NGATMA1
ActiveInfineon Technologies
POWER MOSFET, N CHANNEL, 100 V, 27 A, 0.025 OHM, TO-252 (DPAK), SURFACE MOUNT
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IPD33CN10NGATMA1
ActiveInfineon Technologies
POWER MOSFET, N CHANNEL, 100 V, 27 A, 0.025 OHM, TO-252 (DPAK), SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPD33CN10NGATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 27 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 58 W |
| Rds On (Max) @ Id, Vgs | 33 mOhm |
| Supplier Device Package | PG-TO252-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPD33CN10 Series
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).