HIP2211FBZ-T7A

Obsolete

Renesas Electronics Corporation

100V, 3A SOURCE, 4A SINK, HIGH FREQUENCY HALF-BRIDGE DRIVERS WITH HI/LI INPUT

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HIP2211FBZ-T7A

Obsolete

Renesas Electronics Corporation

100V, 3A SOURCE, 4A SINK, HIGH FREQUENCY HALF-BRIDGE DRIVERS WITH HI/LI INPUT

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Description Specifications Series Pricing CAD Documents

Description

General part information

HIP2211 Series

The HIP2211 is a 100V, 3A source, 4A sink high-frequency half-bridge NMOS FET driver. The HIP2211 features standard HI/LI inputs and is pin-compatible with popular Renesas bridge drivers such as the HIP2101 and ISL2111. Its wide operating supply range of 6V to 18V and integrated high-side bootstrap diode supports driving the high-side and low-side NMOS in 100V half-bridge applications.

This driver features a strong 3A source, 4A sink driver with very fast 15ns typical propagation delay and 2ns typical delay matching, making it optimal for high-frequency switching applications. VDD and boot UVLO protects against an undervoltage operation.

The HIP2211 is offered in 8 Ld SOIC, 8 Ld 4x4mm DFN, and 10 Ld 4x4mm TDFN packages.

Technical Specifications

Parameters and characteristics for this part

Specification	HIP2211FBZ-T7A

Channel Type	Synchronous
Current - Peak Output (Sink)	4 A
Current - Peak Output (Source)	3 A
Driven Configuration	Half-Bridge
Fall Time (Typ)	365 ns
Gate Channel	N-Channel
Gate Type	N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	115 V
Input Type	Non-Inverting
Logic Voltage - VIH	1.84 V
Logic Voltage - VIL	1.47 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	435 ns
Voltage - Supply (Maximum)	18 V
Voltage - Supply (Minimum)	6 V

HIP2211 Series

Part	Gate Channel	Gate Type	Number of Drivers	Operating Temperature (Max)	Operating Temperature (Min)	High Side Voltage - Max (Bootstrap)	Package / Case	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Driven Configuration	Rise Time (Typ)	Fall Time (Typ)	Channel Type	Input Type	Mounting Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	Logic Voltage - VIH	Logic Voltage - VIL	Package Width	Package Name	Package Length	Supplied Contents	Function	Contents	Type	Utilized IC / Part
Renesas Electronics Corporation HIP2211FR8Z	N-Channel	MOSFET	2	125 °C	-40 °C	115 V	8-VDFN Exposed Pad	18 V	6 V	Half-Bridge	20 ns	20 ns	Independent	Non-Inverting	Surface Mount	3 A	4 A	1.84 V	1.47 V	4 mm	8-DFN	4 mm
Renesas Electronics Corporation HIP2211FRTZ-T	N-Channel	MOSFET	2	125 °C	-40 °C	115 V	10-WDFN Exposed Pad	18 V	6 V	Half-Bridge	20 ns	20 ns	Independent	Non-Inverting	Surface Mount	3 A	4 A	1.84 V	1.47 V	4 mm	10-TDFN	4 mm
Renesas Electronics Corporation HIP2211FRTZ	N-Channel	MOSFET	2	125 °C	-40 °C	115 V	10-WDFN Exposed Pad	18 V	6 V	Half-Bridge	20 ns	20 ns	Independent	Non-Inverting	Surface Mount	3 A	4 A	1.84 V	1.47 V	4 mm	10-TDFN	4 mm
Renesas Electronics Corporation HIP2211FRTZ-T7A	N-Channel	MOSFET N-Channel MOSFET	2	125 °C	-40 °C	115 V	10-WDFN Exposed Pad	18 V	6 V	Half-Bridge	435 ns	365 ns	Synchronous	Non-Inverting	Surface Mount	3 A	4 A	1.84 V	1.47 V	4 mm	10-TDFN	4 mm
Renesas Electronics Corporation HIP2211FR8Z-T7A	N-Channel	MOSFET N-Channel MOSFET	2	125 °C	-40 °C	115 V	8-VDFN Exposed Pad	18 V	6 V	Half-Bridge	20 ns	20 ns	Independent	Non-Inverting	Surface Mount	3 A	4 A	1.84 V	1.47 V	4 mm	8-DFN	4 mm
Renesas Electronics Corporation HIP2211FBZ	N-Channel	MOSFET	2	125 °C	-40 °C	115 V		18 V	6 V	Half-Bridge	20 ns	20 ns	Independent	Non-Inverting	Surface Mount	3 A	4 A	1.84 V	1.47 V	3.9 mm	8-SOIC	0.154 in
Renesas Electronics Corporation HIP2211FBZ-T7A	N-Channel	MOSFET N-Channel MOSFET	2	125 °C	-40 °C	115 V		18 V	6 V	Half-Bridge	435 ns	365 ns	Synchronous	Non-Inverting	Surface Mount	3 A	4 A	1.84 V	1.47 V	3.9 mm	8-SOIC	0.154 in
Renesas Electronics Corporation HIP2211FBZ-T	N-Channel	MOSFET N-Channel MOSFET	2	125 °C	-40 °C	115 V		18 V	6 V	Half-Bridge	20 ns	20 ns	Independent	Non-Inverting	Surface Mount	3 A	4 A	1.84 V	1.47 V	3.9 mm	8-SOIC	0.154 in
Renesas Electronics Corporation HIP2211FR8Z-T	N-Channel	MOSFET	2	125 °C	-40 °C	115 V	8-VDFN Exposed Pad	18 V	6 V	Half-Bridge	20 ns	20 ns	Independent	Non-Inverting	Surface Mount	3 A	4 A	1.84 V	1.47 V	4 mm	8-DFN	4 mm
Renesas Electronics Corporation HIP2211EVAL2Z																							Board(s)	Gate Driver	Board	Power Management	HIP2211

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

HIP2210, HIP2211 Datasheet

HIP2211FBZ-T7A | Datasheet