STH185N10F3-6

Obsolete

STMicroelectronics

MOSFET N-CH 100V 180A H2PAK-6

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Obsolete

STMicroelectronics

MOSFET N-CH 100V 180A H2PAK-6

Technical Specifications

Parameters and characteristics for this part

Specification	STH185N10F3-6

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6665 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	315 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	H2PAK-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max) [Max]	Vgs (Max)	Grade	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs
STMicroelectronics STH185N10F3-6	AEC-Q101	-55 °C	175 ░C	D2PAK TO-263-7	315 W	20 V	Automotive	6665 pF	100 V	N-Channel	10 V	H2PAK-6	4 V	MOSFET (Metal Oxide)	180 A	Surface Mount	4.5 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6

Technical documentation and resources

No documents available