Specification	RN2113ACT(TPL3)

Current - Collector (Ic) (Max)	0.08 A
Current - Collector Cutoff (Max)	100 nA
DC Current Gain (hFE) (Min)	120
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Package Name	CST3
Power - Max	100 mW
Resistor - Base (R1) Resistance	47 kOhm
Transistor Type	Pre-Biased, PNP
Vce Saturation (Max)	150 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

RN2113 Series

Bipolar Transistors, PNP Bias Resistor Built-in Transistors (BRT), 47 kΩ/Infinity, SOT-723(VESM)

Part	DC Current Gain (hFE) (Min)	Transistor Type	Power - Max	Frequency - Transition	Current - Collector Cutoff (Max)	Resistor - Base (R1) Resistance	Package / Case	Mounting Type	Package Name	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max)	Current - Collector (Ic) (Max)
Toshiba Semiconductor and Storage RN2113,LF(CT	120	PNP Pre-Biased	100 mW	200 MHz	100 nA	47 kOhm	SC-75 SOT-416	Surface Mount	SSM	50 V	300 mV	0.1 mA
Toshiba Semiconductor and Storage RN2113MFV,L3F	120	PNP Pre-Biased	150 mW		100 nA	47 kOhm	SOT-723	Surface Mount	VESM	50 V	300 mV	0.1 mA
Toshiba Semiconductor and Storage RN2113ACT(TPL3)	120	PNP Pre-Biased	100 mW		100 nA	47 kOhm	SC-101 SOT-883	Surface Mount	CST3	50 V	150 mV	0.08 A

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