STFI10LN80K5

Obsolete

STMicroelectronics

MOSFET N-CH 800V 8A I2PAKFP

Search across all available documentation for this part.

Obsolete

STMicroelectronics

MOSFET N-CH 800V 8A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI10LN80K5

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	427 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	630 mOhm
Supplier Device Package	TO-281 (I2PAKFP)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Supplier Device Package	Mounting Type
STMicroelectronics STFI10LN80K5	8 A	427 pF	-55 °C	150 °C	N-Channel	10 V	MOSFET (Metal Oxide)	30 V	800 V	5 V	630 mOhm	TO-262-3 Full Pack I2PAK	20 W	TO-281 (I2PAKFP)	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 8A (Tc) 20W (Tc) Through Hole TO-281 (I2PAKFP)

Technical documentation and resources