JAN1N4245

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Microchip Technology

DIODE GEN PURP 200V 1A AXIAL

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Microchip Technology

DIODE GEN PURP 200V 1A AXIAL

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	JAN1N4245	1N4245 Series

	-	-
Current - Average Rectified (Io)	1 A	1 A
Current - Reverse Leakage @ Vr	1 µA	1 µA
Grade	Military	Military
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-65 C	-65 C
Package / Case	A, Axial	A, Axial
Qualification	MIL-PRF-19500/286	MIL-PRF-19500/286
Reverse Recovery Time (trr)	5 µs	5 µs
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 mA
Supplier Device Package	A, Axial	A, Axial
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V	200 V
Voltage - Forward (Vf) (Max) @ If	1.3 V	1.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DIODE GEN PURP 200V 1A AXIAL

Part	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Package / Case	Speed	Speed	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Grade
Microchip Technology JAN1N4245	Through Hole	1.3 V	1 A	175 ░C	-65 C	1 µA	Standard	A, Axial	A, Axial	Standard Recovery >500ns	200 mA	5 µs	200 V	MIL-PRF-19500/286	Military
Microchip Technology 1N4245	Through Hole	1.3 V	1 A	175 ░C	-65 C	1 µA	Standard	A, Axial	A, Axial	Standard Recovery >500ns	200 mA	5 µs	200 V
Microchip Technology 1N4245

General part information

Diode 200 V 1A Through Hole A, Axial

Technical documentation and resources