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MASTERGAN1 - 31-QFN

MASTERGAN1

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STMicroelectronics

HIGH POWER DENSITY 600V HALF-BRIDGE DRIVER WITH TWO ENHANCEMENT MODE GAN HEMTS

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MASTERGAN1 - 31-QFN

MASTERGAN1

Active
STMicroelectronics

HIGH POWER DENSITY 600V HALF-BRIDGE DRIVER WITH TWO ENHANCEMENT MODE GAN HEMTS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMASTERGAN1
ApplicationsPower Supplies
Current - Supply800 çA
Mounting TypeSurface Mount
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case31-VQFN Exposed Pad
Supplier Device Package31-QFN (9x9)
Voltage - Supply [Max]9.5 V
Voltage - Supply [Min]4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 11.19
10$ 10.29
25$ 9.86
80$ 9.38
LCSCPiece 1$ 9.51
260$ 3.68
520$ 3.55
1040$ 3.49
NewarkEach 1$ 8.03
10$ 7.55
25$ 7.07

Description

General part information

MASTERGAN1 Series

The MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.

The integrated power GaNs have RDS(ON)of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The MASTERGAN1 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.