Specification	NP29N04QUK-E1-AY

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Max)	29 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1500 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerLDFN
Package Length	5 mm
Package Name	8-HSON
Package Width	5.4 mm
Power - Max (Ta)	1 W
Power - Max (Tc)	44 W
Qualification	AEC-Q101
Rds On (Max)	10.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	4 V

NP29 Series

Part	Package Name	Package Length	Package Width	Input Capacitance (Ciss) (Max)	Channel Count	Configuration	Configuration - Features	Operating Temperature	Technology	Vgs(th) (Max)	Grade	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Gate Charge (Max)	Qualification	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Power - Max (Tc)	Power - Max (Ta)	Current - Continuous Drain (Id)	Current - Continuous Drain (Id) (Ta)
Renesas Electronics Corporation NP29N06QUK-E1-AY	8-HSON	5 mm	5.4 mm	1500 pF	2	N-Channel	Dual	175 °C 175 C	MOSFET (Metal Oxide)	4 V 4 V	Automotive	60 V	Surface Mount	8-PowerLDFN	30 nC	AEC-Q101	30 A	21 mOhm	44 W	1 W	30 A
Renesas Electronics Corporation NP29N04QUK-E1-AY	8-HSON	5 mm	5.4 mm	1500 pF	2	N-Channel	Dual	175 °C	MOSFET (Metal Oxide)	4 V	Automotive	40 V	Surface Mount	8-PowerLDFN	29 nC	AEC-Q101	30 A	10.1 mOhm	44 W	1 W
Renesas Electronics Corporation NP29N06QDK-E1-AY	8-HSON	5 mm	5.4 mm	1500 pF	2	N-Channel	Dual	175 °C	MOSFET (Metal Oxide)	2.5 V	Automotive	60 V	Surface Mount	8-PowerLDFN	24 nC	AEC-Q101		20 mOhm	44 W	1 W		30 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources