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D8V0X1B2LP-7B - Package Image for X1-DFN1006-2

D8V0X1B2LP-7B

Active
Diodes Inc

ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

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D8V0X1B2LP-7B - Package Image for X1-DFN1006-2

D8V0X1B2LP-7B

Active
Diodes Inc

ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationD8V0X1B2LP-7B
ApplicationsGeneral Purpose
Bidirectional Channels [custom]1
Capacitance @ Frequency0.35 pF
Current - Peak Pulse (10/1000µs)4 A
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / Case0402 (1006 Metric)
Power Line ProtectionFalse
Supplier Device PackageX1-DFN1006-2
TypeZener
Voltage - Breakdown (Min) [Min]10 V
Voltage - Clamping (Max) @ Ipp [Max]18.5 V
Voltage - Reverse Standoff (Typ) [Max]8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.06
20000$ 0.05
30000$ 0.05
50000$ 0.05
70000$ 0.04
100000$ 0.04

Description

General part information

D8V0L1B2LP3 Series

This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. The D8V0L1B2LP may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 and IEC 61000-4-5. The TVS diodes provide effective suppression of ESD voltages: ±25 kV (air discharge) and ±25 kV (contact discharge).