TP2104N3-G-P003
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V, 6.0 OHM
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TP2104N3-G-P003
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -40V, 6.0 OHM
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TP2104N3-G-P003 | TP2104 Series |
|---|---|---|
| - | - | |
| Current - Continuous Drain (Id) @ 25°C | 175 mA | 160 - 175 mA |
| Drain to Source Voltage (Vdss) | 40 V | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V | 4.5 - 10 V |
| FET Type | P-Channel | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF | 60 pF |
| Mounting Type | Through Hole | Through Hole, Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | TO-226-3, TO-92-3 | TO-226-3, TO-92-3, SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 740 mW | 360 - 740 mW |
| Rds On (Max) @ Id, Vgs | 6 Ohm | 6 Ohm |
| Supplier Device Package | TO-92-3 | TO-92-3, TO-236AB (SOT23) |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V | 20 V |
| Vgs(th) (Max) @ Id | 2 V | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.89 | |
| 25 | $ 0.75 | |||
| 100 | $ 0.68 | |||
| Tape & Reel (TR) | 2000 | $ 0.68 | ||
| Microchip Direct | T/R | 1 | $ 0.89 | |
| 25 | $ 0.75 | |||
| 100 | $ 0.68 | |||
| 1000 | $ 0.56 | |||
| 5000 | $ 0.53 | |||
| 10000 | $ 0.49 | |||
TP2104 Series
MOSFET, P-Channel Enhancement-Mode, -40V, 6.0 Ohm
| Part | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | FET Type | Power Dissipation (Max) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Technology | Mounting Type | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TP2104N3-G | |||||||||||||||
Microchip Technology TP2104K1-G | |||||||||||||||
Microchip Technology TP2104N3-G-P003 | 4.5 V, 10 V | 40 V | P-Channel | 740 mW | 20 V | 6 Ohm | 175 mA | MOSFET (Metal Oxide) | Through Hole | TO-226-3, TO-92-3 | 60 pF | -55 °C | 150 °C | 2 V | TO-92-3 |
Microchip Technology TP2104K1-G | 4.5 V, 10 V | 40 V | P-Channel | 360 mW | 20 V | 6 Ohm | 160 mA | MOSFET (Metal Oxide) | Surface Mount | SC-59, SOT-23-3, TO-236-3 | 60 pF | -55 °C | 150 °C | 2 V | TO-236AB (SOT23) |
Microchip Technology TP2104K1-G | |||||||||||||||
Microchip Technology TP2104N3-G | 4.5 V, 10 V | 40 V | P-Channel | 740 mW | 20 V | 6 Ohm | 175 mA | MOSFET (Metal Oxide) | Through Hole | TO-226-3, TO-92-3 | 60 pF | -55 °C | 150 °C | 2 V | TO-92-3 |
Microchip Technology TP2104N3-G | |||||||||||||||
Microchip Technology TP2104K1-G |
Description
General part information
TP2104 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources