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IPP028N08N3GXKSA1 - TO-220-3

IPP028N08N3GXKSA1

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Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 2.8 MOHM;

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IPP028N08N3GXKSA1 - TO-220-3

IPP028N08N3GXKSA1

Active
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 2.8 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP028N08N3GXKSA1
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs206 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]14200 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]300 W
Rds On (Max) @ Id, Vgs [Max]2.8 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 50$ 4.87
100$ 4.18
250$ 3.94
500$ 3.71
1250$ 3.18
2500$ 2.99
NewarkEach 1$ 7.28
10$ 6.54
25$ 5.91
50$ 5.40
100$ 4.56
250$ 3.71
500$ 3.49

Description

General part information

IPP028 Series

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Documents

Technical documentation and resources