
IPP028N08N3GXKSA1
ActiveInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 2.8 MOHM;
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DocumentsTechnical Data Sheet EN

IPP028N08N3GXKSA1
ActiveInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; TO-220 PACKAGE; 2.8 MOHM;
Deep-Dive with AI
DocumentsTechnical Data Sheet EN
Technical Specifications
Parameters and characteristics for this part
| Specification | IPP028N08N3GXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 14200 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs [Max] | 2.8 mOhm |
| Supplier Device Package | PG-TO220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPP028 Series
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).
Documents
Technical documentation and resources