IXTN90N25L2

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LITTELFUSE

BIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 90 A, 250 V, 0.036 OHM, 10 V, 4.5 V

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IXTN90N25L2

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LITTELFUSE

BIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 90 A, 250 V, 0.036 OHM, 10 V, 4.5 V

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXTN90 Series

Polar™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. They are dynamic dv/dt and avalanche rated making them extremely rugged in demanding operating environments and can easily be paralleled due to an on-state resistance with positive temperature coefficient. These MOSFETs are ideal in a variety of applications, with best-in-class performance and competitive pricing. Applications include push-pull amplifiers, buck converters, DC choppers, power solid state relays, CMOS high power amplifiers, high current regulators, and high side switching in automotive and test equipment. The superior ruggedness of the Polar P-Channel Power MOSFETs also makes them suitable devices for motor control and power cut-off switches or power SSRs for energy saving applications. Advantages: Low gate charge results in simple drive requirement High power density Easy to parallel Fast switching

Technical Specifications

Parameters and characteristics for this part

Specification	IXTN90N25L2

Current - Continuous Drain (Id) (Tc)	90 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	640 nC, 640 nC
Input Capacitance (Ciss) (Max)	23000 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227B
Power Dissipation (Max)	735 W
Rds On (Max)	33 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IXTN90 Series

Disc Mosfet N-CH Linear L2 SOT-227B(mini

Part	Input Capacitance (Ciss) (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Package Name	Rds On (Max)	Vgs(th) (Max)	Package / Case	Mounting Type	Vgs (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)
LITTELFUSE IXTN90P20P	12000 pF	P-Channel	10 V	200 V	890 W	MOSFET (Metal Oxide)	SOT-227B	44 mOhm	4 V	miniBLOC SOT-227-4	Chassis Mount	20 V	205 nC	-55 °C	150 °C	90 A
LITTELFUSE IXTN90N25L2	23000 pF	N-Channel	10 V	250 V	735 W	MOSFET (Metal Oxide)	SOT-227B	33 mOhm	4.5 V	miniBLOC SOT-227-4	Chassis Mount	20 V	640 nC 640 nC	-55 °C	150 °C	90 A
LITTELFUSE IXTN90N25L2	23000 pF	N-Channel	10 V	250 V	735 W	MOSFET (Metal Oxide)	SOT-227B	33 mOhm	4.5 V	miniBLOC SOT-227-4	Chassis Mount	20 V	640 nC 640 nC	-55 °C	150 °C	90 A
LITTELFUSE IXTN90P20P	12000 pF	P-Channel	10 V	200 V	890 W	MOSFET (Metal Oxide)	SOT-227B	44 mOhm	4 V	miniBLOC SOT-227-4	Chassis Mount	20 V	205 nC	-55 °C	150 °C	90 A

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Datasheet

Product Change Notice EN

UR_QQQX2_E72873_20171208

Handling and Mounting Littelfuse miniBLOC - SOT227B

UR_QQQX2_E153432_20180829

Datasheet

MOSFETs Withstand Stress of Linear-Mode Operation CN White Paper