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IPN50R1K4CEATMA1 - PG-SOT223-3

IPN50R1K4CEATMA1

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Infineon Technologies

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 500 V ; SOT-223 PACKAGE; 1400 MOHM; PRICE/PERFORMANCE

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IPN50R1K4CEATMA1 - PG-SOT223-3

IPN50R1K4CEATMA1

Active
Infineon Technologies

COOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 500 V ; SOT-223 PACKAGE; 1400 MOHM; PRICE/PERFORMANCE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPN50R1K4CEATMA1
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)13 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]178 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max)5 W
Rds On (Max) @ Id, Vgs1.4 Ohm
Supplier Device PackagePG-SOT223-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.87
10$ 0.54
100$ 0.35
500$ 0.27
1000$ 0.24
Digi-Reel® 1$ 0.87
10$ 0.54
100$ 0.35
500$ 0.27
1000$ 0.24
Tape & Reel (TR) 3000$ 0.21
6000$ 0.19
9000$ 0.18
15000$ 0.17
21000$ 0.17
NewarkEach (Supplied on Full Reel) 3000$ 0.24
6000$ 0.23

Description

General part information

IPN50R1 Series

Infineon is growing the portfolio ofCoolMOS™ CEwith theSOT-223 packageas a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from Infineon targets LED lighting and mobile charger applications.

Documents

Technical documentation and resources