
IPN50R1K4CEATMA1
ActiveCOOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 500 V ; SOT-223 PACKAGE; 1400 MOHM; PRICE/PERFORMANCE
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IPN50R1K4CEATMA1
ActiveCOOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 500 V ; SOT-223 PACKAGE; 1400 MOHM; PRICE/PERFORMANCE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPN50R1K4CEATMA1 |
|---|---|
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 13 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 178 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 5 W |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm |
| Supplier Device Package | PG-SOT223-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPN50R1 Series
Infineon is growing the portfolio ofCoolMOS™ CEwith theSOT-223 packageas a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from Infineon targets LED lighting and mobile charger applications.
Documents
Technical documentation and resources