RN1302,LF

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

Technical Specifications

Parameters and characteristics for this part

Specification	RN1302,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Power - Max [Max]	100 mW
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	SC-70
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Power - Max [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Qualification	Resistor - Emitter Base (R2)	Mounting Type	Resistor - Base (R1)	Frequency - Transition	Grade
Toshiba Semiconductor and Storage RN1302,LXHF	50	SC-70 SOT-323	100 mA	50 V	SC-70	100 mW	NPN - Pre-Biased	500 nA	300 mV	AEC-Q101	10 kOhms	Surface Mount	10 kOhms	250 MHz	Automotive
Toshiba Semiconductor and Storage RN1302,LF	50	SC-70 SOT-323	100 mA	50 V	SC-70	100 mW	NPN - Pre-Biased	500 nA	300 mV		10 kOhms	Surface Mount	10 kOhms	250 MHz

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General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SC-70

Technical documentation and resources