JAN1N6626US

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Microchip Technology

DIODE GEN PURP 220V 1.75A D-5B

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JAN1N6626US

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Microchip Technology

DIODE GEN PURP 220V 1.75A D-5B

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Description Specifications Series Pricing CAD Documents

Description

General part information

1N6626 Series

This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N6626US thru 1N6631US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N6626US

Capacitance	40 pF
Current - Average Rectified (Io)	1.75 A
Current - Reverse Leakage	2 µA
Grade	Military
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-65 °C
Package / Case	E, SQ-MELF
Package Name	D-5B
Qualification	590, MIL-PRF-19500
Reverse Recovery Time (trr)	30 ns
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	220 V
Voltage - Forward (Vf) (Max)	1.35 V

1N6626 Series

MIL-PRF-195000-590

Part	Grade	Qualification	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Reverse Recovery Time (trr)	Mounting Type	Package Name	Current - Reverse Leakage	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - Forward (Vf) (Max)	Technology	Current - Average Rectified (Io)	Capacitance	Voltage - DC Reverse (Vr) (Max)	Package / Case
Microchip Technology JAN1N6626US	Military	590 MIL-PRF-19500	500 ns	200 mA	30 ns	Surface Mount	D-5B	2 µA	150 °C	-65 °C	1.35 V	Standard	1.75 A	40 pF	220 V	E SQ-MELF
Microchip Technology JANTXV1N6626	Military	590 MIL-PRF-19500	500 ns	200 mA	30 ns	Through Hole		2 µA	150 °C	-65 °C	1.35 V 1.35 V	Standard	1.75 A	40 pF	220 V	Axial E
Microchip Technology JANTX1N6626U	Military	590 MIL-PRF-19500	500 ns	200 mA	30 ns	Surface Mount	D-5A	2 µA	150 °C	-65 °C	1.35 V 1.35 V	Standard	1.75 A		200 V	A SQ-MELF
Microchip Technology JANTX1N6626	Military	590 MIL-PRF-19500	500 ns	200 mA	30 ns	Through Hole		2 µA	150 °C	-65 °C	1.35 V 1.35 V	Standard	1.75 A	40 pF	220 V	Axial E
Microchip Technology 1N6626			500 ns	200 mA	30 ns	Through Hole	A Axial	2 µA	150 °C	-65 °C	1.35 V 1.35 V	Standard	1.75 A	40 pF	220 V	A Axial
Microchip Technology 1N6626US			500 ns	200 mA	30 ns	Surface Mount	A-MELF	2 µA	150 °C	-65 °C	1.35 V 1.35 V	Standard	1.75 A	40 pF	220 V	A SQ-MELF

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

1N6626US-16631US

Datasheet

JAN1N6626US | Datasheet