STP30N10F7

Obsolete

STMicroelectronics

MOSFET N-CH 100V 32A TO220AB

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Obsolete

STMicroelectronics

MOSFET N-CH 100V 32A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP30N10F7

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1270 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs [Max]	24 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STP30N10F7	20 V	100 V	TO-220-3	19 nC	N-Channel	4.5 V	1270 pF	-55 °C	175 ░C	50 W	TO-220AB	MOSFET (Metal Oxide)	24 mOhm	Through Hole	32 A	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 32A (Tc) 50W (Tc) Through Hole TO-220AB

Technical documentation and resources

No documents available