IXFC52N30P

Obsolete

IXYS

MOSFET N-CH 300V 24A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 300V 24A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFC52N30P

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	3490 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology
IXYS IXFC52N30P	ISOPLUS220™	100 W	110 nC	24 A	Through Hole	75 mOhm	ISOPLUS220™	20 V	-55 °C	150 °C	5 V	3490 pF	N-Channel	10 V	300 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 300 V 24A (Tc) 100W (Tc) Through Hole ISOPLUS220™

Technical documentation and resources

No documents available