SPA11N80C3XKSA2

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Infineon Technologies

MOSFET, N-CH, 800V, 11A, 34W, TO-220FP

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Infineon Technologies

MOSFET, N-CH, 800V, 11A, 34W, TO-220FP

Technical Specifications

Parameters and characteristics for this part

Specification	SPA11N80C3XKSA2

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	85 nC
Input Capacitance (Ciss) (Max) @ Vds	1600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Isolated Tab
Power Dissipation (Max)	34 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies SPA11N80C3XKSA2	-55 °C	150 °C	TO-220-3 Isolated Tab	Through Hole	PG-TO220-3	N-Channel	85 nC	800 V	450 mOhm	10 V	MOSFET (Metal Oxide)	34 W	20 V	1600 pF	3.9 V	11 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 11A (Tc) 34W (Tc) Through Hole PG-TO220-3

Technical documentation and resources