IDFW40E65D1EXKSA1

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Infineon Technologies

650 V, 40 A EMITTER CONTROLLED SILICON POWER DIODE IN TO-247 ADVANCED ISOLATION PACKAGE - PERFECT FOR YOUR DRIVES AND AIR CONDITIONING SYSTEMS.

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Infineon Technologies

650 V, 40 A EMITTER CONTROLLED SILICON POWER DIODE IN TO-247 ADVANCED ISOLATION PACKAGE - PERFECT FOR YOUR DRIVES AND AIR CONDITIONING SYSTEMS.

Technical Specifications

Parameters and characteristics for this part

Specification	IDFW40E65D1EXKSA1

Current - Average Rectified (Io)	42 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	76 ns
Speed	200 mA, 500 ns
Supplier Device Package	PG-TO247-3-AI
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	2.1 V

Part	Reverse Recovery Time (trr)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Package / Case	Current - Average Rectified (Io)	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If
Infineon Technologies IDFW40E65D1EXKSA1	76 ns	200 mA 500 ns	650 V	-40 °C	175 ░C	Standard	40 µA	Through Hole	TO-247-3	42 A	PG-TO247-3-AI	2.1 V

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General part information

Rapid 1switching 650 V, 40 A emitter controlledsilicon power diodein a TO-247advanced isolationpackage for a best cost efficient solution.

Technical documentation and resources

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