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STY139N65M5 - TO-247-3

STY139N65M5

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STMicroelectronics

N-CHANNEL 650 V, 0.014 OHM TYP., 130 A MDMESH M5 POWER MOSFET IN MAX247 PACKAGE

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STY139N65M5 - TO-247-3

STY139N65M5

Active
STMicroelectronics

N-CHANNEL 650 V, 0.014 OHM TYP., 130 A MDMESH M5 POWER MOSFET IN MAX247 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTY139N65M5
Current - Continuous Drain (Id) @ 25°C130 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs363 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]15600 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-247-3
Power Dissipation (Max)625 W
Rds On (Max) @ Id, Vgs17 mOhm
Supplier Device PackageMAX247™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 33.25
30$ 26.00
120$ 24.54

Description

General part information

STY139N65M5 Series

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.