IPA90R500C3XKSA2

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Infineon Technologies

MOSFET N-CH 900V 11A TO220

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Infineon Technologies

MOSFET N-CH 900V 11A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IPA90R500C3XKSA2

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	34 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPA90R500C3XKSA2	TO-220-3 Full Pack	-55 °C	150 °C	900 V	N-Channel	68 nC	20 V	PG-TO220-FP	500 mOhm	Through Hole	MOSFET (Metal Oxide)	34 W	3.5 V	10 V	1700 pF	11 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 900 V 11A (Tc) 34W (Tc) Through Hole PG-TO220-FP

Technical documentation and resources