DSS60600MZ4-13

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Diodes Inc

POWER BIPOLAR TRANSISTOR, 6A I(C), 60V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN, GREEN, PLASTIC PACKAGE-4

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 6A I(C), 60V V(BR)CEO, 1-ELEMENT, PNP, SILICON, PLASTIC/EPOXY, 4 PIN, GREEN, PLASTIC PACKAGE-4

Technical Specifications

Parameters and characteristics for this part

Specification	DSS60600MZ4-13

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	1.2 W
Supplier Device Package	SOT-223-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	350 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

PNP, 60V, 6A, SOT223

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)
Diodes Inc DSS60600MZ4-13	PNP	120	SOT-223-3	1.2 W	-55 °C	150 °C	Surface Mount	100 MHz	350 mV	TO-261-4 TO-261AA	100 nA	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 60V, 6A, SOT223

Technical documentation and resources