AUIRFS6535

Obsolete

Infineon Technologies

MOSFET N-CH 300V 19A D2PAK

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Obsolete

Infineon Technologies

MOSFET N-CH 300V 19A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFS6535

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Input Capacitance (Ciss) (Max) @ Vds	2340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	210 W
Rds On (Max) @ Id, Vgs	185 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	Mounting Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Infineon Technologies AUIRFS6535	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	2340 pF	57 nC	MOSFET (Metal Oxide)	210 W	Surface Mount	5 V	300 V	20 V	N-Channel	-55 °C	175 ░C	19 A	185 mOhm
Infineon Technologies AUIRFS6535TRL	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	2340 pF	57 nC	MOSFET (Metal Oxide)	210 W	Surface Mount	5 V	300 V	20 V	N-Channel	-55 °C	175 ░C	19 A	185 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 300 V 19A (Tc) 210W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources

No documents available