IXTH420N04T2

Obsolete

IXYS

MOSFET N-CH 40V 420A TO247

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Obsolete

IXYS

MOSFET N-CH 40V 420A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH420N04T2

Current - Continuous Drain (Id) @ 25°C	420 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	315 nC
Input Capacitance (Ciss) (Max) @ Vds	19700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	935 W
Rds On (Max) @ Id, Vgs	2 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Package / Case
IXYS IXTH420N04T2	2 mOhm	40 V	10 V	MOSFET (Metal Oxide)	420 A	20 V	315 nC	-55 °C	175 ░C	TO-247 (IXTH)	Through Hole	N-Channel	3.5 V	19700 pF	935 W	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 420A (Tc) 935W (Tc) Through Hole TO-247 (IXTH)

Technical documentation and resources

No documents available