IPB107N20NAATMA1
ActiveInfineon Technologies
POWER MOSFET, N CHANNEL, 200 V, 88 A, 0.0096 OHM, TO-263 (D2PAK), SURFACE MOUNT
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IPB107N20NAATMA1
ActiveInfineon Technologies
POWER MOSFET, N CHANNEL, 200 V, 88 A, 0.0096 OHM, TO-263 (D2PAK), SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB107N20NAATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 88 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 87 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 10.7 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB107 Series
Infineon's 200 V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48 V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.