IXTK250N10

Obsolete

IXYS

MOSFET N-CH 100V 250A TO264

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Obsolete

IXYS

MOSFET N-CH 100V 250A TO264

Technical Specifications

Parameters and characteristics for this part

Specification	IXTK250N10

Current - Continuous Drain (Id) @ 25°C	250 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	430 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	12700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	730 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	TO-264 (IXTK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs(th) (Max) @ Id	Technology	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
IXYS IXTK250N10	250 A	-55 °C	150 °C	TO-264-3 TO-264AA	12700 pF	5 mOhm	20 V	430 nC	N-Channel	4 V	MOSFET (Metal Oxide)	Through Hole	730 W	100 V	10 V	TO-264 (IXTK)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 250A (Tc) 730W (Tc) Through Hole TO-264 (IXTK)

Technical documentation and resources

No documents available