Technical Specifications
Parameters and characteristics for this part
| Specification | STB8N90K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8 A |
| Drain to Source Voltage (Vdss) | 900 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 130 W |
| Rds On (Max) @ Id, Vgs | 800 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.32 | |
| 10 | $ 2.79 | |||
| 100 | $ 2.26 | |||
| 500 | $ 2.01 | |||
| Digi-Reel® | 1 | $ 3.32 | ||
| 10 | $ 2.79 | |||
| 100 | $ 2.26 | |||
| 500 | $ 2.01 | |||
| Tape & Reel (TR) | 1000 | $ 1.72 | ||
| 2000 | $ 1.62 | |||
| 5000 | $ 1.55 | |||
Description
General part information
STB8N90K5 Series
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Documents
Technical documentation and resources
AN2344
Application NotesTN1156
Technical Notes & ArticlesDS11945
Product SpecificationsFlyers (5 of 6)
TN1225
Technical Notes & ArticlesAN2842
Application NotesAN4337
Application NotesAN4250
Application NotesFlyers (5 of 6)
Flyers (5 of 6)
TN1224
Technical Notes & ArticlesTN1378
Technical Notes & ArticlesUM1575
User ManualsFlyers (5 of 6)
Flyers (5 of 6)
Flyers (5 of 6)