RN1313,LF

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A USM

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Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A USM

Technical Specifications

Parameters and characteristics for this part

Specification	RN1313,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	250 MHz
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Power - Max [Max]	100 mW
Qualification	AEC-Q101
Resistor - Base (R1)	47 kOhms
Supplier Device Package	USM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector (Ic) (Max) [Max]	Transistor Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Resistor - Base (R1)	Qualification	Grade	Mounting Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Frequency - Transition	Current - Collector Cutoff (Max) [Max]
Toshiba Semiconductor and Storage RN1313,LF	100 mA	NPN - Pre-Biased	100 mW	50 V	USM	47 kOhms	AEC-Q101	Automotive	Surface Mount	300 mV	120	SC-70 SOT-323	250 MHz	100 nA

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General part information

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount USM

Technical documentation and resources