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DMP2040UND-13 - Package Image for PowerDI3333-8

DMP2040UND-13

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Diodes Inc

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP2040UND-13 - Package Image for PowerDI3333-8

DMP2040UND-13

Active
Diodes Inc

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP2040UND-13
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C13.6 A
Current - Continuous Drain (Id) @ 25°C5.3 A
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs20 nC
Input Capacitance (Ciss) (Max) @ Vds834 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power - Max [Max]900 mW
Rds On (Max) @ Id, Vgs36 mOhm
Supplier Device PackagePowerDI3333-8 (Type UXB)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.19
6000$ 0.18
9000$ 0.16
30000$ 0.16

Description

General part information

DMP2040UND Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.