EL7202CN

Active

Elantec

BUFFER/INVERTER BASED MOSFET DRI

Search across all available documentation for this part.

Active

Elantec

BUFFER/INVERTER BASED MOSFET DRI

Technical Specifications

Parameters and characteristics for this part

Specification	EL7202CN

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2 A
Current - Peak Output (Source, Sink) [custom]	2 A
Driven Configuration	Low-Side
Gate Type	N-Channel, P-Channel MOSFET, P-Channel
Input Type	Non-Inverting
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature	125 ¯C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	10 ns
Rise / Fall Time (Typ) [custom]	7.5 ns
Supplier Device Package	8-PDIP
Voltage - Supply [Max]	15 V
Voltage - Supply [Min]	4.5 V

Part	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Gate Type	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature	Input Type	Number of Drivers	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Channel Type	Driven Configuration	Supplier Device Package	Package / Case	Package / Case
Elantec EL7202CS	2 A	2 A	N-Channel P-Channel MOSFET	8-SOIC	3.9 mm	0.154 in	125 ¯C	Non-Inverting	2	10 ns	7.5 ns	4.5 V	15 V	Surface Mount	Independent	Low-Side	8-SOIC
Elantec EL7202CN	2 A	2 A	N-Channel P-Channel P-Channel MOSFET	8-DIP			125 ¯C	Non-Inverting	2	10 ns	7.5 ns	4.5 V	15 V	Through Hole	Independent	Low-Side	8-PDIP	0.3 in	7.62 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Low-Side Gate Driver IC Non-Inverting 8-PDIP

Technical documentation and resources

No documents available