BUFFER/INVERTER BASED MOSFET DRI
| Part | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Gate Type | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature | Input Type | Number of Drivers | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Voltage - Supply [Min] | Voltage - Supply [Max] | Mounting Type | Channel Type | Driven Configuration | Supplier Device Package | Package / Case | Package / Case | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Elantec  | 2 A  | 2 A  | N-Channel  P-Channel MOSFET  | 8-SOIC  | 3.9 mm  | 0.154 in  | 125 ¯C  | Non-Inverting  | 2  | 10 ns  | 7.5 ns  | 4.5 V  | 15 V  | Surface Mount  | Independent  | Low-Side  | 8-SOIC  | ||
Elantec  | 2 A  | 2 A  | N-Channel  P-Channel  P-Channel MOSFET  | 8-DIP  | 125 ¯C  | Non-Inverting  | 2  | 10 ns  | 7.5 ns  | 4.5 V  | 15 V  | Through Hole  | Independent  | Low-Side  | 8-PDIP  | 0.3 in  | 7.62 mm  |