SGB15N120ATMA1

Obsolete

Infineon Technologies

IGBT 1200V 30A 198W TO263-3

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Obsolete

Infineon Technologies

IGBT 1200V 30A 198W TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SGB15N120ATMA1

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Pulsed (Icm)	52 A
Gate Charge	130 nC
IGBT Type	NPT
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	198 W
Supplier Device Package	PG-TO263-3-2
Switching Energy	1.9 mJ
Td (on/off) @ 25°C	580 ns
Td (on/off) @ 25°C	18 ns
Test Condition	15 A, 15 V, 33 Ohm, 800 V
Vce(on) (Max) @ Vge, Ic	3.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Mounting Type	Package / Case	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Test Condition	Switching Energy	Current - Collector (Ic) (Max) [Max]	Gate Charge	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Supplier Device Package	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]
Infineon Technologies SGB15N60HSATMA1	-55 °C	150 °C	138 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	60 A	3.15 V	15 A 15 V 23 Ohm 400 V	530 µJ	27 A	80 nC	13 ns	209 ns	PG-TO263-3-2	NPT	600 V
Infineon Technologies SGB15N120ATMA1	-55 °C	150 °C	198 W	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	52 A	3.6 V	15 A 15 V 33 Ohm 800 V	1.9 mJ	30 A	130 nC	18 ns	580 ns	PG-TO263-3-2	NPT	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 1200 V 30 A 198 W Surface Mount PG-TO263-3-2

Technical documentation and resources

No documents available