TSM1NB60CW RPG

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Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 600V 1A SOT223

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Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 600V 1A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	TSM1NB60CW RPG

Current - Continuous Drain (Id) @ 25°C	1 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	138 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	39 W
Rds On (Max) @ Id, Vgs [Max]	10 Ohm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Technology
Taiwan Semiconductor Corporation TSM1NB60CP ROG	Surface Mount	N-Channel	4.5 V	138 pF	10 Ohm	10 V	600 V	TO-252 (DPAK)	39 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	1 A	-55 °C	150 °C	6.1 nC	30 V	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM1NB60CH C5G	Through Hole	N-Channel	4.5 V	138 pF	10 Ohm	10 V	600 V	TO-251 (IPAK)	39 W	IPAK TO-251-3 Short Leads TO-251AA	1 A	-55 °C	150 °C	6.1 nC	30 V	MOSFET (Metal Oxide)
Taiwan Semiconductor Corporation TSM1NB60CW RPG	Surface Mount	N-Channel	4.5 V	138 pF	10 Ohm	10 V	600 V	SOT-223	39 W	TO-261-4 TO-261AA	1 A	-55 °C	150 °C	6.1 nC	30 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 1A (Tc) 39W (Tc) Surface Mount SOT-223

Technical documentation and resources