ZXM66P02N8TA

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Search across all available documentation for this part.

Obsolete

Diodes Inc

NRND = NOT RECOMMENDED FOR NEW DESIGN

Technical Specifications

Parameters and characteristics for this part

Specification	ZXM66P02N8TA

Current - Continuous Drain (Id) @ 25°C	6.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	43.3 nC
Input Capacitance (Ciss) (Max) @ Vds	2068 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.56 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	700 mV

NRND = Not Recommended for New Design

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Diodes Inc ZXM66P02N8TA	43.3 nC	8-SO	2.5 V 4.5 V	12 V	MOSFET (Metal Oxide)	6.4 A	Surface Mount	700 mV	25 mOhm	1.56 W	P-Channel	-55 °C	150 °C	8-SOIC	3.9 mm	0.154 in	2068 pF	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

NRND = Not Recommended for New Design

Technical documentation and resources