STH160N4LF6-2

Obsolete

STMicroelectronics

MOSFET N-CH 40V 120A H2PAK-2

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Obsolete

STMicroelectronics

MOSFET N-CH 40V 120A H2PAK-2

Technical Specifications

Parameters and characteristics for this part

Specification	STH160N4LF6-2

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	181 nC
Input Capacitance (Ciss) (Max) @ Vds	8130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	H2Pak-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

Part	FET Type	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)
STMicroelectronics STH160N4LF6-2	N-Channel	1 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.2 mOhm	120 A	-55 °C	175 ░C	10 V	5 V	8130 pF	181 nC	MOSFET (Metal Oxide)	20 V	150 W	Surface Mount	H2Pak-2	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 120A (Tc) 150W (Tc) Surface Mount H2PAK-2

Technical documentation and resources